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Items where Person is "Trémouilles, David"

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Article

Boige, François and Trémouilles, David and Richardeau, Frédéric. Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET. (2019) IEEE Electron Device Letters, 40 (5). 666-669. ISSN 0741-3106

Saint Macary, Léna and Kahn, Myrtil L. and Estournès, Claude and Fau, Pierre and Trémouilles, David and Bafleur, Marise and Renaud, Philippe and Chaudret, Bruno. Size effect on properties of varistors made from zinc oxide nanoparticles through low temperature spark plasma sintering. (2009) Advanced Functional Materials, 19 (11). 1775-1783. ISSN 1616-301X

This list was generated on Tue Nov 19 05:58:33 2019 CET.