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Items where Person is "Trémouilles, David"
Group by: Item Type | No Grouping Jump to: Article Number of items: 2. ArticleBoige, François and Trémouilles, David and Richardeau, Frédéric. Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET. (2019) IEEE Electron Device Letters, 40 (5). 666-669. ISSN 0741-3106 Saint Macary, Léna and Kahn, Myrtil L. and Estournès, Claude and Fau, Pierre and Trémouilles, David and Bafleur, Marise and Renaud, Philippe and Chaudret, Bruno. Size effect on properties of varistors made from zinc oxide nanoparticles through low temperature spark plasma sintering. (2009) Advanced Functional Materials, 19 (11). 1775-1783. ISSN 1616-301X |
