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Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Souchier, Emeline and Besland, Marie-Paule and Tranchant, Julien and Corraze, Benoit and Moreau, Philippe and Retoux, Richard and Estournès, Claude and Mazoyer, Pascale and Cario, Laurent and Janod, Etienne Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. (2013) Thin Solid Films, 533. 54-60. ISSN 0040-6090

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Official URL: http://dx.doi.org/10.1016/j.tsf.2012.11.051


We report here on the deposition of GaV4S8 thin layers by radio frequency (RF) magnetron sputtering in pure argon using a GaV4S8 target synthesized by spark plasma sintering. Thin layers were deposited at low deposition pressure and RF power, respectively 5.33 Pa and 60 W (i.e. 3 W cm−2). Since as-deposited thin layers were sulfur-poor and amorphous, a one hour ex-situ annealing at 873 K in a sulfur-rich atmosphere was performed to restore the stoichiometric composition GaV4S8 and the expected crystalline structure. Chemical analyses and high resolution transmission electron microscopy observations of thin layers are consistent with a GaV4S8 phase without any secondary phase. Rietveld refinements of the X-ray diffraction (XRD) patterns confirm the good crystalline quality of the annealed deposited film constituted of crystallites exhibiting an average grain size in the 32–36 nm range. Moreover, an excellent agreement was obtained between Rietveld refinement performed on GaV4S8 powder and thin films XRD data.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com/science/article/pii/S0040609012015489
HAL Id:hal-00865622
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Other partners > Ecole Nationale Supérieure d'Ingénieurs de Caen - ENSICAEN (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Other partners > STMicroelectronics (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Other partners > Université de Nantes (FRANCE)
Other partners > Université de Caen Basse-Normandie (FRANCE)
Laboratory name:
Deposited On:24 Sep 2013 14:22

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