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Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Pelamatti, Alice and Goiffon, Vincent and Estribeau, Magali and Cervantes, Paola and Magnan, Pierre Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors. (2013) IEEE Electron Device Letters, 34 (7). 900-902. ISSN 0741-3106

(Document in English)

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Official URL: http://dx.doi.org/10.1109/LED.2013.2260523


This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flux

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
HAL Id:hal-00854018
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited On:26 Aug 2013 08:25

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