Numerical modelling of a high temperature power module technology with SiC devices for high density power electronics

Abstract

This paper presents the development of a new packaging technology using silicon carbide (SiC) power devices. These devices will be used in the next power electronic converters. They will provide higher densities, switching frequencies and operating temperature than current Si technologies. Thus the new designed packaging has to take into account such new constraints. The presented work tries to demonstrate the importance of packaging designs for the performance and reliability of integrated SiC power modules. In order to increase the integrated density in power modules, packaging technologies consisting of two stacked substrates with power devices and copper bumps soldered between them were proposed into two configurations. Silver sintering technique is used as die-attach material solution. In order to assess the assembling process and robustness of these packaging designs, the thermo-mechanical behaviour is studied using FEM modelling. Finally, some recommendations are made in order to choose the suitable design for reliable power modules