Bieber, Anne-Laure and Massot, Laurent
and Gibilaro, Mathieu
and Cassayre, Laurent
and Taxil, Pierre
and Chamelot, Pierre
Silicon electrodeposition in molten fluorides.
(2011)
Electrochimica Acta, 62. 282-289. ISSN 0013-4686
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 781kB |
Official URL: http://dx.doi.org/10.1016/j.electacta.2011.12.039
Abstract
Silicon nucleation process was investigated in molten NaF-KF (40-60 mol%) on silver electrodes in the 820-950°C temperature range in order to optimize silicon coating operating conditions. Chronoamperometric measurements evidenced that silicon electrodeposition process involved an instantaneous nucleation with diffusion-controlled nuclei growth whatever temperature and Si(IV) ions concentration in the mixture. The overpotential and temperature influence on nucleation sites number was also studied. Silicon deposits were obtained using the same temperature range as nucleation study, for different current densities on substrates: Ni, Ag, Cgraphite and Cvitreous. A sensitive influence of the cathodic substrate on the deposit adherence and roughness was observed and discussed.
Item Type: | Article |
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Additional Information: | Thanks to Elsevier editor. The definitive version is available at http://dx.doi.org/10.1016/j.electacta.2011.12.039 The original PDF of the article can be found at Electrochimica Acta website : http://dx.doi.org/10.1016/j.electacta.2011.12.039 |
HAL Id: | hal-03537607 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | |
Institution: | French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) |
Laboratory name: | |
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Deposited On: | 26 Mar 2013 15:02 |
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