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Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes

Place, Sébastien and Carrere, Jean-Pierre and Allegret, Stephane and Magnan, Pierre and Goiffon, Vincent and Roy, François Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes. (2012) IEEE Transactions on Nuclear Science, 59 (4). 909-917. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2012.2193671


CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with 60Co source. Based on dark current and temporal noise analysis, we develop and propose a phenomenological model to explain pixel performance degradation.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > STMicroelectronics (FRANCE)
Laboratory name:
Deposited On:28 Jan 2013 10:53

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