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Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

Place, Sébastien and Carrere, Jean-Pierre and Allegret, Stephane and Magnan, Pierre and Goiffon, Vincent and Roy, François Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode. (2012) IEEE Transactions on Nuclear Science, 59 (6). 2888-2893. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2012.2223486


1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned photodiode architectures in ionizing environments is demonstrated.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > STMicroelectronics (FRANCE)
Laboratory name:
Deposited On:25 Jan 2013 16:03

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