Virmontois, Cédric and Goiffon, Vincent and Corbière, Franck and Magnan, Pierre and Girard, Sylvain and Bardoux, Alain Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors. (2012) IEEE Transactions on Nuclear Science, 59 (6). 2872-2877. ISSN 0018-9499
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Official URL: http://dx.doi.org/10.1109/TNS.2012.2224129
Abstract
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g. Particle fluence up to $5 times 10^{14}$ n.cm $^{-2}$ is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude.
| Item Type: | Article |
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| Audience (journal): | International peer-reviewed journal |
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| Institution: | French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) French research institutions > Centre National d'Études Spatiales - CNES (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
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| Statistics: | download |
| Deposited By: | Corinne PRUNIER |
| Deposited On: | 14 Jan 2013 14:48 |
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