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Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes

Place, Sébastien and Carrere, Jean-Pierre and Magnan, Pierre and Goiffon, Vincent and Roy, François Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes. (2011) In: 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2011, 19-23 Sept 2011, Sevilla, Spain .

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Official URL: http://dx.doi.org/10.1109/RADECS.2011.6131310


A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications. A phenomenological approach is proposed through behavior analysis of multiple sensors embedding different technological choices (pitch, isolation or buried oxide). A complete characterization including dark current, activation energy and temporal noise analysis allows to discuss about a degradation scheme.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (conference):International conference proceedings
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > STMicroelectronics (FRANCE)
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Deposited On:11 Dec 2012 11:43

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