Barnabé, Antoine
and Mugnier, Emmanuelle and Presmanes, Lionel and Tailhades, Philippe
Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate.
(2006)
Materials Letters, 6 (29-). 3468-3470. ISSN 0167-577X
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 101kB |
Official URL: http://dx.doi.org/10.1016/j.matlet.2006.03.033
Abstract
CuFeO2 CuFeO2 is a delafossite-type compound and is a well known p-type semiconductor. The growth of delafossite CuFeO2 thin films on conventional glass substrate by radio-frequency sputtering is reported. The deposition, performed at room temperature leads to an amorphous phase with extremely low roughness and high density. The films consisted of a well crystallized delafossite CuFeO2 after heat treatment at 450 °C in inert atmosphere. The electrical conductivity of the film was 1 mS/cm. The direct optical band gap was estimated to be 2 eV.
| Item Type: | Article |
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| Additional Information: | This publication is available on http://www.sciencedirect.com/science/journal/0167577X |
| HAL Id: | hal-03598184 |
| Audience (journal): | International peer-reviewed journal |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) |
| Laboratory name: | |
| Statistics: | download |
| Deposited On: | 04 Sep 2008 09:07 |
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