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Graphene in silicon photovoltaic cells

Tap Béteille, Hélène and Caussat, Brigitte and Vergnes, Hugues and Trinsoutrot, Pierre and Conédéra, Véronique and Guerin, François and Gessinn, Frédéric and Grisolia, Jérémie and Launay, Jérôme and Arguel, Philippe Graphene in silicon photovoltaic cells. (2012) In: 38th International conference on Micro and Nano Engineering MNE2012 , 16 September 2012 - 20 September 2012 (Toulouse, France). (Unpublished)

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Graphene is an allotrope of carbon. Its structure is one-atom-thick planar sheets of carbon atoms that are densely packed in a honeycomb crystal lattice [1]. The richness of optical and electronic properties of graphene attracts enormous interest. Its true potential seems to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited. The optical absorption of graphene layers is proportional to the number of layers, each absorbing A=1-T=πα=2.3% over the visible spectrum [2].The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Current photovoltaic (PV) technology is dominated by Si cells, with an energy conversion coefficient  up to 25% [3]. Such an inorganic PV consists in a current transparent conductor (TC) replacing one of the electrodes of a PIN photodiode. The standard material used so far for these electrodes is indium-tinoxide, or ITO. But indium is expensive and relatively rare, so the search has been on for a suitable replacement. A possible substitute made from inexpensive and ubiquitous carbon is graphene. Being only constituted of carbon, it will become cheap and easily recyclable. But at the moment, the major difficulty consists in its fabrication and/or transfer. Our project consists in synthetizing graphene by CVD (Chemical Vapor Deposition) on Cu and in transferring the obtained layer on silicon PV cells, and then in testing their energy conversion efficiency.

Item Type:Conference or Workshop Item (Poster)
Additional Information:The proceedings will be available on a special issue of "Microelectronic Engineering" journal published by Elsevier editor (http://www.journals.elsevier.com/microelectronic-engineering/)
HAL Id:hal-04028867
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
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Deposited On:30 Oct 2012 14:50

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