An assessment of contact metallization for high power and high temperature diamond Schottky devices

Abstract

Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current–voltage (I–V) characteristics, the series resistance and the thermal stability are discussed in the range of RT to 625 K for all Schottky devices. High current densities close to 3.2 kA/cm2 are displayed and as the series resistance decreases with increasing temperature, proving the potential of diamond for high power and high temperature devices. The thermal stability of metal/diamond interface investigated with regards to the Schottky barrier height (SBH) and ideality factor n fluctuations indicated that Ni and W are thermally stable in the range of RT to 625 K. Current–voltage measurements at reverse bias indicated a maximum breakdown voltage of 70 V corresponding to an electric field of 3.75 MV/cm. Finally, these electrical measurements have been completed with mechanical adhesion tests of contact metallizations on diamond by nano-scratching technique. These studies clearly reveal Ni as a promising contact metallization for high power, high temperature and good mechanical strength diamond Schottky barrier diode applications.