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Gate-dependent magnetoresistance phenomena in carbon nanotubes

Fedorov, G. and Lassagne, Benjamin and Sagnes, Mathieu and Raquet, Bertrand and Broto, Jean-Marc and Triozon, François and Roche, Stephan and Flahaut, Emmanuel Gate-dependent magnetoresistance phenomena in carbon nanotubes. (2005) Physical review letters , 9. 066801.1-066801.4 . ISSN 0031-9007

(Document in English)

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Official URL: https://doi.org/10.1103/PhysRevLett.94.066801


We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under magnetic field as large as 50 Tesla. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidences for unconventional magnetoresistance are presented and interpreted by means of theoretical calculations.

Item Type:Article
Additional Information:Thanks to American Physical Society editor. The definitive version is available at http://prola.aps.org/ The original PDF of the article can be found at Physical review letters website : http://prl.aps.org/
HAL Id:hal-03601122
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
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Deposited On:06 Feb 2009 09:14

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