Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Place, Sébastien and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Estribeau, Magali and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2012) IEEE Transactions on Nuclear Science, 59 (4). 918-926. ISSN 0018-9499
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Official URL: http://dx.doi.org/10.1109/TNS.2012.2190422
Abstract
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral STI does not seem to play a role in the degradation. The PPD area and an additional contribution independent on the pixel dimensions appear to be the main sources of the TID induced dark current increase.
| Item Type: | Article |
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| Additional Information: | A la demande de l'auteur on ne mentionne pas le nom de la conférence ni les informations la concernant pour ne pas alimenter l'ambiguïté avec le post 5077 qui est l'acte de conférence légèrement différent de l'article paru. Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org |
| Audience (journal): | International peer-reviewed journal |
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | Image Sensors - CMOS Image Sensors - CIS - Active Pixel Sensors - APS - Monolithic Active Pixel Sensors - MAPS - Pinned Photodiodes - PPD - Ionizing Radiation - Total Ionizing Dose - TID - Dark current - Leakage current - Charge Transfer - Transfer Gate - Shallow Trench Isolation - STI - Deep Submicron Process - DSM - Radiation Hardening - RHBD |
| Institution: | French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
| Laboratory name: | Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Image Sensor Research Team |
| Statistics: | download |
| Deposited On: | 03 May 2012 13:04 |
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