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Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Place, Sébastien and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Estribeau, Magali and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2012) IEEE Transactions on Nuclear Science, 59 (4). 918-926. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2012.2190422


This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral STI does not seem to play a role in the degradation. The PPD area and an additional contribution independent on the pixel dimensions appear to be the main sources of the TID induced dark current increase.

Item Type:Article
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Audience (journal):International peer-reviewed journal
Audience (conference):International conference proceedings
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Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited On:03 May 2012 13:04

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