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Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

Lampin, E. and Cristiano, F. and Lamrani, Youness and Connétable, Damien Optimisation of the parameters of an extended defect model applied to non-amorphizing implants. (2005) Materials science and engineering B, 124-125. 397-400. ISSN 0921-5107

(Document in English)

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Official URL: http://dx.doi.org/10.1016/j.mseb.2005.08.032


In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first part, we determine the formation energies of the small clusters, the fault energy of the {113} defects, their Burgers vector and the self-diffusivity of silicon using TEM measurements and extractions of the supersaturation from the spreading of boron marker layers in low-dose implanted silicon. The improvements of the simulations are presented for the fitted experiments and for other wafers annealed at intermediate temperatures. In the second part, we increase the dose and energy of the non-amorphizing implant, leading to the transformation of {113} defects into dislocation loops. The predictions obtained with the optimised model are shown to be in agreement with the measurements. (c) 2005 Elsevier B.V. All rights reserved.

Item Type:Article
Additional Information:Symposium on Materials Science and Device Issues for Future Si-Based Technologies held at the 2005 EMRS Meeting, Strasbourg, FRANCE, MAY 31-JUN 03, 2005. Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found at Materials science and engineering B website : http://www.sciencedirect.com/science/article/pii/S0921510705005076
HAL Id:hal-03599806
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Université de Toulouse > Université Toulouse - Jean Jaurès - UT2J (FRANCE)
Other partners > Institut Supérieur d’Electronique et du Numérique - ISEN (FRANCE)
Other partners > Université Lille 1, Sciences et Technologies - Lille 1 (FRANCE)
Other partners > Université de Valenciennes et du Hainaut-Cambrésis - UVHC (FRANCE)
Laboratory name:
Deposited On:24 Feb 2012 11:18

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