Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation. (2009) In: International Image Sensor Workshop, 25-28 June 2009, Bergen, Norway .
|
(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 114kB |
Official URL: http://www.imagesensors.org/Past%20Workshops/2009%20Workshop/2009%20Papers/2009%20IISW%20Program.htm
Abstract
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to imaging.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
| Laboratory name: | Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Image Sensor Research Team |
| Statistics: | download |
| Deposited By: | Vincent Goiffon |
| Deposited On: | 28 Nov 2011 14:08 |
Repository Staff Only: item control page
