Multimode VCSEL model for wide frequency-range RIN simulation

Abstract

In this paper, we present an equivalent circuit model for oxide-confined AlGaAs/GaAs VCSEL with the noise contribution adapted to optomicrowave links applications. This model is derived from the multimode rate equations. In order to understand the modal competition process, we restrain our description to a two-modes rate equations system affected by the spectral hole-burning. The relative intensity noise (RIN) measurements which were achieved on a prober in Faraday cage confirm the low frequency enhancement described by the model. We validate our model for a wide frequency-range [1 MHz–10 GHz] and high bias level up to six times the threshold current.