Artemenko, Alla and Elissalde, Catherine and Chung, U-Chan and Estournès, Claude and Mornet, Stéphane and Bykov, Igor and Maglione, Mario
Linking hopping conductivity to giant dielectric permittivity in oxides.
(2010)
Applied Physics Letters, 93 (13). ISSN 0003-6951
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 556kB |
Official URL: http://dx.doi.org/10.1063/1.3495779
Abstract
With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such giant behavior to occur but the underlying conduction and localization mechanisms are not well known. Comparing macroscopic dielectric relaxation to microscopic dynamics of charged defects resulting from electron paramagnetic resonance investigations we identify the actual charged defects in the case of BaTiO3 ceramics and composites. This link between the thermal activation at these two complementary scales may be extended to the numerous oxides were giant dielectric behavior was found.
Item Type: | Article |
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Additional Information: | Thanks to AIP editor. The definitive version is available at http://www.aip.org/ The original PDF of the article can be found at Applied Physics Letters website : http://apl.aip.org/ |
HAL Id: | hal-00530394 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | |
Institution: | French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Other partners > Université de Bordeaux 1 (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) Other partners > NASc of Ukraine (UKRAINE) |
Laboratory name: | |
Funders: | Centre National de Recherche Scientifique - CNRS |
Statistics: | download |
Deposited On: | 31 May 2011 13:32 |
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