Goiffon, Vincent and Magnan, Pierre and Martin-Gonthier, Philippe and Virmontois, Cédric and Gaillardin, Marc Evidence of a novel source of random telegraph signal in CMOS image sensors. (2011) IEEE Electron Device Letters, 32 (6). 773-775. ISSN 0741-3106
|
(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 319kB |
Official URL: http://dx.doi.org/10.1109/LED.2011.2125940
Abstract
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.
| Item Type: | Article |
|---|---|
| Additional Information: | Thanks to IEEE editor. The definitive version is available at http://ieeexplore.ieee.org/ The original PDF of the article can be found at IEEE Electron Device Letters website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
| Audience (journal): | International peer-reviewed journal |
| Uncontrolled Keywords: | |
| Institution: | French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
| Laboratory name: | Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI |
| Statistics: | download |
| Deposited By: | Vincent Goiffon |
| Deposited On: | 27 Apr 2011 07:45 |
Repository Staff Only: item control page
