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Residual Stress Mechanisms in Aluminum Oxide Films Grown by MOCVD

Soni, Sumit K. and Samélor, Diane and Sheldon, Brian W. and Vahlas, Constantin and Gleizes, Alain Residual Stress Mechanisms in Aluminum Oxide Films Grown by MOCVD. (2009) ECS Transactions, 25 (8). 1309-1315. ISSN 1938-6737

(Document in English)

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Official URL: http://dx.doi.org/10.1149/1.3207737


Residual stresses in amorphous aluminium oxide films were investigated with in situ wafer curvature measurements. The films were deposited from aluminium tri-isopropoxide, on sapphire substrates. Large tensile stresses of 1-2 GPa occurred during growth. These values are well above the fracture stress in bulk materials, but they are sustainable in thin film form. Subsequent heat treatment of these films produced additional tensile stress, even at low temperatures prior to crystallization. The mechanisms responsible for all of these stress contributions are discussed. The variety of operative mechanisms at low to moderate temperatures in these amorphous films suggests that different processing routes can be used to engineer significant differences in the final stress state of these materials.

Item Type:Article
Additional Information:Thanks to The Electrochemical Society editor. The definitive version is available at http://www.electrochem.org/ The original PDF of the article can be found at ECS Transactions website : http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ECSTF8000025000008001309000001&idtype=cvips&gifs=yes&ref=no
HAL Id:hal-03565657
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Other partners > Brown University (USA)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Laboratory name:
Deposited On:27 Jan 2012 09:43

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