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CVD of pure copper films from amidinate precursor

Krisyuk, Vladislav V. and Aloui, Lyacine and Prud’homme, Nathalie and Sarapata, Bartosz and Senocq, François and Samélor, Diane and Vahlas, Constantin CVD of pure copper films from amidinate precursor. (2009) ECS Transactions, 25 (8). 581-586. ISSN 1938-6737

(Document in English)

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Official URL: http://dx.doi.org/10.1149/1.3207643


Copper(I) amidinate [Cu(i-Pr-Me-AMD)]2 was investigated to produce copper films in conventional low pressure chemical vapor deposition (CVD) using hydrogen as reducing gas-reagent. Copper films were deposited on steel, silicon, and SiO2/Si substrates in the temperature range 200–350°C at a total pressure of 1333 Pa. The growth rate on steel follows the surface reaction between atomic hydrogen and the entire precursor molecule up to 240°C. A significant increase of the growth rate at temperatures higher than 300°C was attributed to thermal decomposition of the precursor molecule. It is shown that [Cu(i-Pr-Me-AMD)]2 meets the specifications for the metal organic chemical vapor deposition of Cu-based alloy coatings containing oxophilic elements such as aluminum.

Item Type:Article
Additional Information:This article is available on procedings about : 216th ECS Meeting, October 4 - October 9, 2009 , Vienna, Austria. Thanks to The Electrochemical Society editor. The definitive version is available at http://www.electrochem.org/ The original PDF of the article can be found at ECS Transactions website : http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ECSTF8000025000008000581000001&idtype=cvips&gifs=yes&ref=no
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Other partners > Siberian Branch of the Russian Academy of Sciences - SB RAS (RUSSIA)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Laboratory name:
Deposited On:20 Jan 2011 14:56

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