Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process. (2009) Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 610 (1). 225-229. ISSN 0168-9002
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 363kB |
Official URL: http://dx.doi.org/10.1016/j.nima.2009.05.078
Abstract
Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large photodiode reverse current measurements. The only degradation observed was a photodiode dark current increase. It was found that ionizing dose effects dominate this rise by inducing generation centers at the interface between shallow trench isolations and depleted silicon regions. Displacement damages are responsible for a large degradation of dark current non-uniformity. This work suggests that designing a photodiode tolerant to ionizing radiation can mitigate an important part of proton irradiation effects.
Item Type: | Article |
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Additional Information: | Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found in : Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Volume 610, Issue 1, 21 October 2009, Pages 225-229 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | |
Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) Other partners > EADS - Astrium (FRANCE) French research institutions > Centre National d'Études Spatiales - CNES (FRANCE) |
Laboratory name: | Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI |
Statistics: | download |
Deposited On: | 03 Sep 2009 15:04 |
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