Gleizes, Alain and Sovar, Maria-Magdalena and Samélor, Diane and Vahlas, Constantin Low Temperature MOCVD-Processed Alumina Coatings. (2006) Advances in Science and Technology, 45. 1184-1193. ISSN 1662-8969
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 301kB |
Official URL: http://dx.doi.org/10.4028/www.scientific.net/AST.45.1184
Abstract
We first present a Review about the preparation of alumina as thin films by the technique of MOCVD at low temperature (550°C and below). Then we present our results about thin films prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source, and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with water vapour. The deposition temperature was varied in the range 350-550°C. The films are amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in the gas phase, the films are pure alumina whatever the deposition temperature.
| Item Type: | Article |
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| Additional Information: | Thanks to Trans Tech Publications editor. The definitive version is available at http://www.scientific.net The original PDF of the article can be found at Advances in Science and Technology website : http://www.scientific.net/AST |
| Audience (journal): | International peer-reviewed journal |
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| Institution: | Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) |
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| Statistics: | download |
| Deposited On: | 26 Jun 2009 07:36 |
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