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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Jay, Antoine and Hemeryck, Anne and Cristiano, Fuccio and Rideau, Denis and Julliard, Pierre-Louis and Goiffon, Vincent and Le Roch, Alexandre and Martin-Samos, Layla and Gironcoli, Stefano De and Richard, Nicolas Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study. (2021) In: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 27 September 2021 - 29 September 2021 (Dallas, United States).

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Official URL: https://doi.org/10.1109/SISPAD54002.2021.9592553


The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that:(i)a cluster of defects is highly metastable,(ii)it introduces several electronic states in the band gap,(iii)it has an electronic cross section much higher than the one of point defects.These three points can simultaneously explain why an electron-hole generation rate can switch with time, while respecting the experimental measurement.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/9592553 “© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > STMicroelectronics (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Université de Toulouse > Université Toulouse - Jean Jaurès - UT2J (FRANCE)
Université de Toulouse > Université Toulouse 1 Capitole - UT1 (FRANCE)
Laboratory name:
Deposited On:02 Feb 2022 09:42

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