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Tutorial on Radiation Effects on CMOS Image Sensors

Goiffon, Vincent Tutorial on Radiation Effects on CMOS Image Sensors. (2021) In: RADOPT 2021: Workshop on Radiation Effects on Optoelectronics and Photonics Technologies, 15 November 2021 - 18 November 2021 (Saint-Etienne, France). (Unpublished)

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Nowadays, CMOS Image Sensors (CIS), also called Active Pixel Sensors (APS), represent the most popular solid-state imager technology as illustrated by its ubiquity in mass consumer smartphones and cameras. In particular, CISs are used in various imaging applications in harsh radiation environments (e.g. space remote sensing, nuclear and scientific instrumentation and medical imaging). During this lecture, the particularities of the CIS technology will be briefly presented. In a second part, an overview of the most important radiation effects on these imagers will be discussed. In particular, the physical mechanisms at the origin of the most important Total Ionizing Dose (TID) and Displacement Damage (DD) effects in CISs will be detailed including: charge transfer degradation, dark current increase, hot pixel creation, and random telegraph signals (RTS).

Item Type:Invited Conference
Audience (conference):International conference without published proceedings
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited On:31 Jan 2022 13:12

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