OATAO - Open Archive Toulouse Archive Ouverte Open Access Week

Cr-based MOCVD layers as conducting diffusion barriers for copper metallization

Maury, Francis and Duminica, Florin-Daniel and Gasquères, Cyril Cr-based MOCVD layers as conducting diffusion barriers for copper metallization. (2006) Moroccan Journal of Condensed Matter , 7 (1). 16-21. ISSN 1114-2073

(Document in English)

PDF (Author's version ) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader

Official URL:


Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.

Item Type:Article
Additional Information:Thanks to Moroccan Statistical Physical Society editor. The definitive version is available at http://www.fsr.ac.ma/MJCM/ The original PDF of the article can be found at Moroccan Journal of Condensed Matter website : www.fsr.ac.ma/MJCM/
HAL Id:hal-03481707
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Laboratory name:
Deposited On:02 Jul 2009 07:38

Repository Staff Only: item control page