Maury, Francis and Duminica, Florin-Daniel and Gasquères, Cyril Cr-based MOCVD layers as conducting diffusion barriers for copper metallization. (2006) Moroccan Journal of Condensed Matter , 7 (1). 16-21. ISSN 1114-2073
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(Document in English)
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Abstract
Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.
| Item Type: | Article |
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| Additional Information: | Thanks to Moroccan Statistical Physical Society editor. The definitive version is available at http://www.fsr.ac.ma/MJCM/ The original PDF of the article can be found at Moroccan Journal of Condensed Matter website : www.fsr.ac.ma/MJCM/ |
| HAL Id: | hal-03481707 |
| Audience (journal): | International peer-reviewed journal |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) |
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| Statistics: | download |
| Deposited On: | 02 Jul 2009 07:38 |
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