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Dark Count Rate Modeling in Single-Photon Avalanche Diodes

Panglosse, Aymeric and Martin-Gonthier, Philippe and Marcelot, Olivier and Virmontois, Cédric and Saint-Pé, Olivier and Magnan, Pierre Dark Count Rate Modeling in Single-Photon Avalanche Diodes. (2020) IEEE Transactions on Circuits and Systems I: Regular Papers, 67 (5). 1507-1515. ISSN 1549-8328

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Official URL: https://doi.org/10.1109/TCSI.2020.2971108


In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology Computer-Aided Design (TCAD) simulations and a Matlab routine.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8999742 “© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-03035812
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Other partners > Airbus (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
Deposited On:02 Dec 2020 12:02

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