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Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

Doyen, Célestin and Ricq, Stéphane and Magnan, Pierre and Marcelot, Olivier and Barlas, Marios and Place, Sébastien Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process. (2020) Sensors, Special issue Human-Machine Interaction and Sensors, 20 (1). 287. ISSN 1424-8220

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Official URL: https://doi.org/10.3390/s20010287

Abstract

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.

Item Type:Article
HAL Id:hal-03040611
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > STMicroelectronics (FRANCE)
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Deposited On:04 Dec 2020 13:18

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