Doyen, Célestin and Ricq, Stéphane and Magnan, Pierre
and Marcelot, Olivier
and Barlas, Marios and Place, Sébastien
Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process.
(2020)
Sensors, Special issue Human-Machine Interaction and Sensors, 20 (1). 287. ISSN 1424-8220
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(Document in English)
PDF (Publisher's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 1MB |
Official URL: https://doi.org/10.3390/s20010287
Abstract
A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.
Item Type: | Article |
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HAL Id: | hal-03040611 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | |
Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) Other partners > STMicroelectronics (FRANCE) |
Laboratory name: | |
Statistics: | download |
Deposited On: | 04 Dec 2020 13:18 |
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