OATAO - Open Archive Toulouse Archive Ouverte Open Access Week

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Durnez, Clémentine and Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Rubaldo, Laurent Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays. (2020) IEEE Transactions on Electron Devices, 67 (11). 4940-4946. ISSN 0018-9383

[img]
Preview
(Document in English)

PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
1MB

Official URL: https://doi.org/10.1109/TED.2020.3022336

Abstract

In this work, the parasitic discrete fluctuation of dark current (dc) called random telegraph signal (RTS) is analyzed in image sensors based on two different semiconductor materials: InSb and silicon. The results show that this dc-RTS phenomenon exhibits similar characteristics on both technologies strongly suggesting a common physical origin. This conclusion is extended to InGaAs and HgCdTe (also referred to as MCT)-based image sensors by comparing the presented results to the existing literature.

Item Type:Article
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Lynred (FRANCE)
Laboratory name:
Statistics:download
Deposited On:04 Nov 2020 11:09

Repository Staff Only: item control page