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Ιn situ N2-NH3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD

Gakis, Giorgos and Vergnes, Hugues and Cristiano, Filadelfo and Tison, Yann and Vahlas, Constantin and Caussat, Brigitte and Boudouvis, Andreas G. and Scheid, Emmanuel Ιn situ N2-NH3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD. (2019) Journal of Applied Physics, 126. ISSN 0021-8979

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Official URL: https://doi.org/10.1063/1.5113755

Abstract

The initial substrate inhibiting island growth and the formation of an interfacial layer with uncontrollable characteristics are the two main drawbacks of the Atomic Layer Deposition (ALD) of high-k metal-oxide gate dielectrics on silicon (Si). In this paper, we investigate the ALD of Al2O3 films from trimethyl aluminum and H2O, on fluorhydric acid (HF) cleaned, as well as on HF-cleaned and in situ N2-NH3 plasma pretreated Si between 0 and 75 cycles. The films and their interface were characterized via Scanning Transmission Electron Microscopy coupled to Energy-Dispersive X-ray spectroscopy. The initial deposition is clearly increased on the pretreated surfaces, obtaining a linear ALD regime even after 5 ALD cycles, compared to several tens of cycles needed on HF-cleaned Si. Furthermore, a SixNy layer is formed by the N2-NH3 plasma pretreatment, which acts as a barrier layer, reducing the oxidation of the Si substrate beneath it. This analysis provides a general framework for the understanding and determination of adequate surface pretreatments, able to combat the substrate inhibited initial growth and the Si oxidation during metal-oxide ALD on Si.

Item Type:Article
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Other partners > National Technical University of Athens - NTUA (GREECE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Other partners > Université de Pau et des Pays de l'Adour - UPPA (FRANCE)
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Toulouse Tech Inter Lab 2016 grant and Toulouse INP and NTUA Research Committee supports
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Deposited On:09 Oct 2019 07:54

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