Marcelot, Olivier
and Goiffon, Vincent and Magnan, Pierre
Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations.
(2019)
IEEE Transactions on Electron Devices, 66 (8). 3411-3416. ISSN 0018-9383
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 570kB |
Official URL: https://doi.org/10.1109/TED.2019.2922755
Abstract
The use of pinned photodiode (PPD) based CMOS image sensors in harsh radiation environment (such as space) is limited by their tolerance to ionizing radiation. Technology computer aided design (TCAD) simulations are performed to reproduce the radiation induced defect and therefore the dark current increase in pinned photodiode pixels up to 1 kGy (i.e. 100 krad) of total ionizing dose (TID). To do so, the TCAD models are calibrated with measurements performed on irradiated pixels. Then, the influence on the PPD radiation hardness of various manufacturing process and pixel design modifications is explored. This works shows that the proposed modification can improve the radiation hardness of pinned photodiode CMOS image sensors against ionizing.
| Item Type: | Article |
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| Additional Information: | Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8755315 “© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Audience (journal): | International peer-reviewed journal |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
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| Statistics: | download |
| Deposited On: | 22 Jul 2019 13:08 |
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