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Raman G band in double-wall carbon nanotubes combining p doping and high pressure

Puech, Pascal and Ghandour, Ahmad and Sapelkin, Andrei and Tinguely, Cyril and Flahaut, Emmanuel and Dunstan, David J. and Bacsa, Wolfgang Raman G band in double-wall carbon nanotubes combining p doping and high pressure. (2008) Physical Review B: Condensed Matter, 78 (4). 045413-1. ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.78.045413

Abstract

We use sulfuric acid as pressure medium to extrapolate the G-band position of the inner and outer tubes of double-wall carbon nanotubes. Keeping the G-band position of the inner and outer tubes constant, we can determine the fraction of double-wall and single-wall tubes in samples containing a mixture of the two. A-band-related electronic interwall interaction at 1560 cm−1 is observed, which is associated with the outer tube walls. This band is observed to shift with pressure at the same rate as the G band of outer tubes and is not suppressed with chemical doping. Differences in the interwall interaction is discussed for double-wall carbon nanotubes grown by the catalytic chemical-vapor method and double-wall carbon nanotubes obtained through transformation of peapods.

Item Type:Article
Additional Information:Thanks to American Physical Society editor. The definitive version is available at http://scitation.aip.org The original PDF of the article can be found at Physical Review B: Condensed Matter website : http://prb.aps.org/
HAL Id:hal-00806029
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Other partners > University of London (UNITED KINGDOM)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
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Deposited On:29 Apr 2009 13:22

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