Puech, Pascal and Ghandour, Ahmad and Sapelkin, Andrei and Tinguely, Cyril and Flahaut, Emmanuel and Dunstan, David J. and Bacsa, Wolfgang Raman G band in double-wall carbon nanotubes combining p doping and high pressure. (2008) Physical Review B: Condensed Matter, 78 (4). 045413-1. ISSN 1098-0121
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 460kB |
Official URL: http://dx.doi.org/10.1103/PhysRevB.78.045413
Abstract
We use sulfuric acid as pressure medium to extrapolate the G-band position of the inner and outer tubes of double-wall carbon nanotubes. Keeping the G-band position of the inner and outer tubes constant, we can determine the fraction of double-wall and single-wall tubes in samples containing a mixture of the two. A-band-related electronic interwall interaction at 1560 cm−1 is observed, which is associated with the outer tube walls. This band is observed to shift with pressure at the same rate as the G band of outer tubes and is not suppressed with chemical doping. Differences in the interwall interaction is discussed for double-wall carbon nanotubes grown by the catalytic chemical-vapor method and double-wall carbon nanotubes obtained through transformation of peapods.
Item Type: | Article |
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Additional Information: | Thanks to American Physical Society editor. The definitive version is available at http://scitation.aip.org The original PDF of the article can be found at Physical Review B: Condensed Matter website : http://prb.aps.org/ |
HAL Id: | hal-00806029 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | |
Institution: | Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Other partners > University of London (UNITED KINGDOM) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) |
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Deposited On: | 29 Apr 2009 13:22 |
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