Boige, François
and Trémouilles, David and Richardeau, Frédéric
Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET.
(2019)
IEEE Electron Device Letters, 40 (5). 666-669. ISSN 0741-3106
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 885kB |
Official URL: https://doi.org/10.1109/LED.2019.2896939
Abstract
During the short circuit of a vertical 4H-SiCpower MOSFET, a high gate current starts to flow throughthe gate dielectric. We demonstrate that the Schottky emis-sion is the main physical mechanisms.
| Item Type: | Article |
|---|---|
| HAL Id: | hal-02506599 |
| Audience (journal): | International peer-reviewed journal |
| Uncontrolled Keywords: | |
| Institution: | French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) |
| Laboratory name: | |
| Funders: | Agence Nationale de la Recherche - ANR (FRANCE) |
| Statistics: | download |
| Deposited On: | 07 Jun 2019 09:57 |
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