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Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

Boige, François and Trémouilles, David and Richardeau, Frédéric Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET. (2019) IEEE Electron Device Letters, 40 (5). 666-669. ISSN 0741-3106

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Official URL: https://doi.org/10.1109/LED.2019.2896939

Abstract

During the short circuit of a vertical 4H-SiCpower MOSFET, a high gate current starts to flow throughthe gate dielectric. We demonstrate that the Schottky emis-sion is the main physical mechanisms.

Item Type:Article
HAL Id:hal-02506599
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
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Funders:
Agence Nationale de la Recherche - ANR (FRANCE)
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Deposited On:07 Jun 2019 09:57

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