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Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber

Tegegne, Zerihun Gedeb and Viana, Carlos and Polleux, Jean-Luc and Grzeskowiak, Marjorie and Richalot, Elodie Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber. (2018) IEEE Transactions on Electron Devices, 65 (6). 2537-2543. ISSN 0018-9383

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Official URL: https://doi.org/10.1109/TED.2018.2828166


The intrinsic frequency response of silicon- germanium heterojunction bipolar phototransistors (HPTs) at 850 nm is studied to be implemented in multimode fiber systems. The experimental analysis of an HPT with an optical window size of 10 × 10 μm 2 is presented. An opto-microwave (OM) scanning near-field optical microscopy is performed to observe the variation of the HPT dynamic behavior versus the illumination location of the phototransistor. The photocurrent generated by the photodiode at the interface between the n ++ subcollector and the p± guard ring is analyzed, and its impact on the performance of the HPT is investigated. Then, we propose a technique to remove the substrate photocurrent effect on the optical transition frequency (f Topt ): fTopt value of 4.1 GHz given by raw measurement results increases up to 6 GHz after removing the substrate response. The influence of the 2-D carrier flows on the HPT intrinsic OM behavior is also studied. Design aspects of SiGe/Si HPT structures are finally discussed as a conclusion.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8352103 “© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Audience (journal):International peer-reviewed journal
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Institution:Other partners > Conservatoire National des Arts et Métiers - CNAM (FRANCE)
Other partners > Ecole de l'Innovation Technologique - ESIEE PARIS (FRANCE)
Other partners > Université Paris-Est Marne-La-Vallée - UPEM (FRANCE)
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Deposited On:21 Jun 2019 13:24

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