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Study of lateral scaling impact on the frequency performance of SiGe Heterojunction Bipolar Phototransistor

Tegegne, Zerihun Gedeb and Viana, Carlos and Polleux, Jean-Luc and Grzeskowiak, Marjorie and Richalot, Elodie Study of lateral scaling impact on the frequency performance of SiGe Heterojunction Bipolar Phototransistor. (2018) IEEE Journal of Quantum Electronics, 54 (3). 1-9. ISSN 0018-9197

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Official URL: https://doi.org/10.1109/JQE.2018.2822179


The influence of the lateral scaling such as emitter width and length on the frequency behavior of SiGe bipolar transistor is experimentally studied. Electrical transistors of different emitter sizes are designed and fabricated by using a commercial bipolar transistor technology. The effect of peripheral current and collector current spreading on electrical bipolar transistor performances are analyzed in regards to the state of the art. Furthermore, the lateral scaling effect on SiGe phototransistor electrical and opto-microwave frequency behavior is studied. The impact of the lateral flow of photo-generated carriers toward the optical opening in phototransistor structure is investigated. Moreover, the 2-D carrier flow effect on the opto-microwave frequency behavior of the phototransistor is characterized through optomicrowave scanning near-field optical microscopy measurements, in the course of which the intrinsic parameters, such as transit time and junction capacitances are extracted over the surface of the phototransistor. An intrinsic optical transition frequency of 6.5 GHz is measured for 10 × 10 μm2.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8329228 “© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Audience (journal):International peer-reviewed journal
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Institution:Other partners > Conservatoire National des Arts et Métiers - CNAM (FRANCE)
Other partners > Ecole de l'Innovation Technologique - ESIEE PARIS (FRANCE)
Other partners > Université Paris-Est Marne-La-Vallée - UPEM (FRANCE)
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Deposited On:29 Apr 2019 15:15

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