Rizzolo, Serena
and Goiffon, Vincent and Sergent, Marius and Corbière, Franck and Rolando, Sébastien and Chabane, Aziouz and Paillet, Philippe and Marcandella, Claude and Girard, Sylvain and Magnan, Pierre and Van Uffelen, Marco and Mont Casellas, Laura and Scott, Robin and De Cock, Wouter
Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances.
(2017)
In: Radiations Effects on Components and Systems (RADECS), 2 October 2017 - 6 October 2017 (Geneva, Switzerland).
|
(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 796kB |
Abstract
MOSFETs variability in irradiated CIS up to 10 MGy (SiO2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| HAL Id: | hal-02092843 |
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | ITER - CMOS Image Sensors - CIS - Fixed Pattern Noise - FPN - MOSFET - Total Ionizing Dose - TID - Readout chain - Radiation Effects |
| Institution: | French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) Other partners > Institut d'optique Graduate School - IOGS (FRANCE) Other partners > Université Jean Monnet - St Etienne (FRANCE) Other partners > Centre d'Etude de l'Energie Nucléaire - SCK-CEN (BELGIQUE) Other partners > Fusion for Energy - F4E (SPAIN) Other partners > Oxford Technologies Ltd. - OTL (UNITED KINGDOM) |
| Laboratory name: | |
| Statistics: | download |
| Deposited On: | 08 Apr 2019 12:53 |
Repository Staff Only: item control page
