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Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Marcelot, Olivier and Goiffon, Vincent and Rizzolo, Serena and Pace, Federico and Magnan, Pierre Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations. (2017) IEEE Transactions on Electron Devices, 64 (12). 4985-4991. ISSN 0018-9383

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Official URL: https://doi.org/10.1109/TED.2017.2762433


TCAD simulations are conducted on a 4T PPD pixel, on a conventional gated photodiode, and finally on a radiation hardened pixel. Simulations consist in demonstrating that it is possible to reduce the dark current due to interface states brought by the adjacent gate, by means of a sharing mechanism between the photodiode and the drain. The sharing mechanism is activated and controlled by polarizing the adjacent gate at a positive \itshape off \upshape voltage, and consequently the dark current is reduced and not compensated. The drawback of the dark current reduction is a reduction of the full well capacity of the photodiode, which is not a problem when the pixel saturation is limited by the readout chain. Some measurement performed on pixel arrays confirm the TCAD results.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8089363 “© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01997956
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited On:29 Jan 2019 11:37

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