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Alumina ALD from TMA and Water : Unravelling the surface mechanisms and linking transport phenomena with growth uniformity

Gakis, Giorgos and Vergnes, Hugues and Scheid, Emmanuel and Vahlas, Constantin and Boudouvis, Andreas G. and Caussat, Brigitte Alumina ALD from TMA and Water : Unravelling the surface mechanisms and linking transport phenomena with growth uniformity. In: E-MRS, 17 September 2018 - 20 September 2018 (Vasovie, Poland). (Unpublished)

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Abstract

During the last two decades, Atomic Layer Deposition (ALD) has emerged as the appropriate process to produce conformal nanometric films, thus answering to the requirements of micro- and opto- electronic devices. The ALD process is complex since it involves transport phenomena occurring inside the reactor chamber and numerous surface phenomena taking place simultaneously in short time scales. This makes the understanding the ALD chemistry a chellenge, due to the difficulty of experimental measurements. In this work, a computational surface chemistry model is developed, taking into account the reactant adsorption, desorption and reaction mechanisms on the substrate surface. This model is coupled to a reactor scale CFD model for a commercial ALD reactor in order to simulate the whole process of Al2O3 deposition from TMA and H2O on 20 cm wafers. A combination of ellipsometry measurements and computationsis performed to study the growth kinetics and the deposition uniformity. A reaction probability study is conducted for TMA and water on the various surface sites between 100 and 300°C.

Item Type:Conference or Workshop Item (Other)
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Other partners > National Technical University of Athens - NTUA (GREECE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
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Deposited On:08 Feb 2019 15:43

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