Ouendi, Saliha and Arico, Cassandra and Blanchard, Florent and Codron, Jean-Louis and Wallart, Xavier and Taberna, Pierre-Louis
and Roussel, Pascal and Clavier, Laurent and Simon, Patrice
and Lethien, Christophe
Synthesis of T-Nb2O5 thin-films deposited by Atomic Layer Deposition for miniaturized electrochemical energy storage devices.
(2019)
Energy Storage Materials, 16. 581-588. ISSN 2405-8297
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 1MB |
Official URL: https://doi.org/10.1016/j.ensm.2018.08.022
Abstract
Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb2O5 films onto Pt current collectors deposited on Si wafer. While T-Nb2O5 polymorph is obtained by further annealing at 750 °C, the film thickness and the resulting electrode areal capacity are successfully controlled by tuning the number of ALD cycles. The electrochemical analysis reveals a lithium ion intercalation redox mechanism in the T-Nb2O5 electrode. An electrode areal capacity of 8 μAh cm-² could be achieved at 1 C, with only 40% capacity loss at 30 C(2 minutes discharging time). This paper aims at demonstrating the use of Atomic Layer Deposition method in the fabrication of Nb205-based on-chip micro-devices for Internet of Things (IoT) applications.
Item Type: | Article |
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HAL Id: | hal-02135683 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | |
Institution: | French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) Other partners > Réseau de stockage électrochimique de l’énergie - Energie RS2E (FRANCE) Other partners > Université de Lille (FRANCE) |
Laboratory name: | |
Funders: | ANR - MINOTORES |
Statistics: | download |
Deposited On: | 05 Feb 2019 13:42 |
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