Trajin, Baptiste
and Vidal, Paul-Etienne and Viven, Julien
Electro-thermal model of an integrated buck converter.
(2015)
In: 17th European Conference on Power Electronics and Applications (EPE), 10 September 2015 - 8 September 2015 (Genève, Switzerland).
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 311kB |
Official URL: http://event-epe2015.web.cern.ch/
Abstract
This study deals with new integrated systems for power electronic applications including wide-band gap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectives such as higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study the electro-thermal behaviour of an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of local heat sources due to Joule effect and compact thermal model of the assembly are proposed to predict local temperature of power electronic components.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| HAL Id: | hal-01905431 |
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE) |
| Laboratory name: | |
| Statistics: | download |
| Deposited By: | Pascale Lalot |
| Deposited On: | 17 Oct 2018 14:56 |
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