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Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors

Rizzolo, Serena and Goiffon, Vincent and Estribeau, Magali and Marcelot, Olivier and Martin-Gonthier, Philippe and Magnan, Pierre Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors. (2018) IEEE Transactions on Electron Devices, 65 (3). 1048-1055. ISSN 0018-9383

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Official URL: http://dx.doi.org/10.1109/TED.2018.2790443


The influence of pixel design on image lag is investigated by focusing on two different aspects which impact the charge transfer. First it is confirmed that the transfer gate channel doping profile strongly affects image lag. Introducing a step under the TG in the potential diagram, due to the doping implant differences in the channel, enables very good transfer performances by limiting spill-back of the charge to the photodiode. On the other hand, it is demonstrated that the overlap between the two implants used to create the step can produce a potential barrier under the transfer gate which extension increases the image lag. Then, the influence of pixel layout geometrical parameters (e.g. of the photodiode size, the transfer gate length and floating diffusion area) on the charge transfer efficiency is clarified. The whole study conclusions allow identifying the design parameter limiting the transfer efficiency in a given design and the possible design based solutions to improve it.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8260535 “© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited On:13 Feb 2019 14:59

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