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Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application

Le Roch, Alexandre and Goiffon, Vincent and Durnez, Clémentine and Magnan, Pierre and Virmontois, Cédric and Pistre, L. and Belloir, Jean-Marc Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application. (2017) In: RADECS 2017 : Radiation and Its Effects on Components and Systems, 2 October 2017 - 6 October 2017 (Geneva, Switzerland). (Unpublished)

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We propose to identify the displacement damage defects induced by proton and carbon irradiations in a commercial off-the-shelf pinned photodiode (PPD) 8T-CMOS image sensors (CISs) dedicated to space application operating in global shutter mode. This paper aims to provide a better understanding of defects creation in a specific space image sensor. Therefore, it leads to comparable results to those we could find during the mission. The study focuses on bulk defects located in the PPD depleted region which represents the main dark current contribution in PPD CIS. Four sensors have been irradiated with carbon ions and protons at different energies and fluencies. Using both the dark current spectroscopy and the random telegraph signal (RTS) analysis, we investigate defects behavior for different isochronal annealing temperatures. By combining these results, we make the connection between two complementary phenomena and bring out the prevalence of divacancies-based defects in term of dark current contribution.

Item Type:Conference or Workshop Item (Other)
HAL Id:hal-02115909
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
Deposited On:30 Apr 2019 13:26

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