Goiffon, Vincent and Rizzolo, Serena
and Corbière, Franck
and Rolando, Sébastien
and Bounasser, Said
and Sergent, Marius
and Chabane, Aziouz
and Marcelot, Olivier
and Estribeau, Magali
and Magnan, Pierre
and Paillet, Philippe and Girard, Sylvain and Gaillardin, Marc and Marcandella, Claude and Allanche, Timothé and Van Uffelen, Marco and Casellas, Laura Mont and Scott, Robin and De Cock, Wouter
Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling.
(2018)
IEEE Transactions on Nuclear Science, 65 (1). 101-110. ISSN 0018-9499
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(Document in English)
PDF (Auhtor's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 539kB |
Official URL: http://dx.doi.org/10.1109/TNS.2017.2765481
Abstract
Total ionizing dose effects are studied on a radiation hardened by design (RHBD) 256×256 -pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X- and γ -ray irradiations. The (color) imaging capabilities of the RHBD CIS are demonstrated up to 10 MGy (SiO2), 1 Grad (SiO2), validating the radiation hardness of most of the designed integrated circuit. No significant sensitivity (i.e., responsivity and color filter transmittance) or readout noise degradation is observed. The proposed readout chain architecture allows achieving a maximum output voltage swing larger than 1 V at 10 MGy (SiO2). The influence of several pixel layout (the gate oxide thickness, the gate overlap distance, and the use of an in-pixel P+ ring) and manufacturing process parameters (photodiode doping profile and process variation) on the radiation-induced dark current increase is studied. The nature of the dark current draining mechanism used to cancel most of the radiation-induced degradation is also discussed and clarified.
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