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Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis. (2008) IEEE Transactions on Nuclear Science, 5 (6). 3494-3501. ISSN 0018-9499

(Document in English)

PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader

Official URL: http://dx.doi.org/10.1109/TNS.2008.2005294


Ionizing radiation effects on CMOS image sensors (CIS) manufactured using a 0.18 µm imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and MOSFETs. Oxide characterizations appear necessary to understand ionizing dose effects on devices and then on image sensors. The main degradations observed are photodiode dark current increases (caused by a generation current enhancement), minimum size NMOSFET off-state current rises and minimum size PMOSFET radiation induced narrow channel effects. All these effects are attributed to the shallow trench isolation degradation which appears much more sensitive to ionizing radiation than inter layer dielectrics. Unusual post annealing effects are reported in these thick oxides. Finally, the consequences on sensor design are discussed thanks to an irradiated pixel array and a comparison with previous work is discussed.

Item Type:Article
Additional Information:Thanks to the Institute of Electrical and Electronics Engineers(IEEE). The original PDF can be found on the IEEE website : http://dx.doi.org/10.1109/TNS.2008.2005294
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > EADS - Astrium (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
CNES - Centre National d'Etudes Spaciales - EADS Astrium - European Aeronautic Defence and Space
Deposited On:21 Jan 2009 16:31

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