Zerarka, Moustafa and Austin, Patrick
and Bensoussan, Alain and Morancho, Frédéric and Durier, André
TCAD simulation of the Single Event Effects in normally-off GaN transistors after heavy ion radiation.
(2017)
In: 16th European Conference on Radiation and Its Effects on Components and Systems 2016 (RADECS), 19 September 2016 - 23 September 2016 (Bremen, Germany).
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 5MB |
Official URL: http://dx.doi.org/10.1109/RADECS.2016.8093202
Abstract
Electrical behavior of normally-off GaN power transistors under heavy ion stress radiation is presented based on 2D-TCAD numerical simulation in order to better understand the mechanism of Single Event Effects (SEE) in these devices.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Thanks to IEEE editor. The definitive version is available at http://ieeexplore.ieee.org The original PDF can be found at : http://ieeexplore.ieee.org/document/7937891/. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| HAL Id: | hal-01692046 |
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | |
| Institution: | French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Other partners > IRT Saint Exupéry - Institut de Recherche Technologique (FRANCE) |
| Laboratory name: | |
| Funders: | Thales Alenia Space - Institute of Technology Antoine de Saint Exupery |
| Statistics: | download |
| Deposited On: | 24 Jan 2018 14:35 |
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