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Simulation of Single Particle Displacement Damage in Silicon – Part II: Generation and Long-Time Relaxation of Damage Structure

Jay, Antoine and Raine, Mélanie and Richard, Nicolas and Mousseau, Normand and Goiffon, Vincent and Hémeryck, Anne and Magnan, Pierre Simulation of Single Particle Displacement Damage in Silicon – Part II: Generation and Long-Time Relaxation of Damage Structure. (2017) IEEE Transactions on Nuclear Science, 64 (1). 141-148. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2016.2628089


A statistical study of displacement cascades induced by silicon Primary Knock-on Atoms (PKA) in bulk silicon is performed by running a large number of molecular dynamics (MD) simulations. The choice of the PKA species and energy varying from 1 to 100 keV comes from a previous particle-matter simulation [1]. The electronic stopping power missing in standard MD simulations is here taken into account using the Two Temperature Model (TTM). This prevents from overestimating the number of created defects. The damaged atomic structures obtained after one nanosecond of MD simulation are not representative of what is observed in image sensors for example after several minutes. For this reason, the kinetic Activation Relaxation Technique (k-ART) is used in a second step, allowing to access longer simulation times of up to second. The obtained damaged structures can then be compared with experimental observations. Analyses reveal two possible links between the simulated structures and the measurements in solid-state image sensors. First, the cluster size distribution exhibits a shape similar to the measured exponential distribution of Dark Current (DC). Second, the temporal evolution of metastable atomic configurations resembles experimental DC-Random-Telegraph-Signals.

Item Type:Article
Additional Information:(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other work. Thanks to IEEE editor. The definitive version is available at http://dx.doi.org/10.1109/TNS.2016.2628089
Audience (journal):International peer-reviewed journal
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Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Université de Montréal - UdeM (CANADA)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Laboratory name:
Deposited On:27 Sep 2017 12:54

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