Zerarka, Moustafa
and Austin, Patrick and Bensoussan, Alain and Morancho, Frédéric and Durier, André
TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation.
(2017)
IEEE Transactions on Nuclear Science, 64 (8). 2242-2249. ISSN 0018-9499
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 5MB |
Official URL: http://dx.doi.org/10.1109/TNS.2017.2710629
Abstract
Electrical behavior of normally-off GaN power transistors under heavy ion stress radiation is presented based on 2D-TCAD numerical simulation in order to better understand the mechanism of Single Event Effects (SEE) in these devices.
| Item Type: | Article |
|---|---|
| Additional Information: | Thanks to IEEE editor. The original PDF of the article can be found at http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7937891 |
| Audience (journal): | International peer-reviewed journal |
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | |
| Institution: | French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE) Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE) Université de Toulouse > Université Toulouse - Jean Jaurès - UT2J (FRANCE) Université de Toulouse > Université Toulouse 1 Capitole - UT1 (FRANCE) Other partners > IRT Saint Exupéry - Institut de Recherche Technologique (FRANCE) |
| Laboratory name: | |
| Statistics: | download |
| Deposited On: | 29 Nov 2017 15:44 |
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