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Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation

Raine, Mélanie and Jay, Antoine and Richard, Nicolas and Goiffon, Vincent and Girard, Sylvain and Gaillardin, Marc and Paillet, Philippe Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation. (2017) In: Nuclear and Space Radiation Effects Conference (NSREC), 11 July 2016 - 15 July 2016 (Portland, United States).

(Document in English)

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Official URL: http://dx.doi.org/10.1109/TNS.2016.2615133


A comprehensive approach is developed for the simulation of Single Particle Displacement Damage in silicon, from the incident particle interaction in silicon, to the resulting electrical effect observed experimentally. The different steps of the global approach are described. The paper then focuses on the first step corresponding to Monte Carlo simulation of the primary interaction. The characteristics of the Primary Knock-On Atom (PKA) generated by neutron- or proton-silicon interactions for different energies are explored, analyzing in particular the PKA range in energies and species. This leads to the selection of 1 and 10 keV silicon atoms as good candidates to best represent the displacement cascades generated by all PKA. These PKA characteristics will be used as input in the following Molecular Dynamics simulation step, developed in a separate paper to simulate the displacement cascade generation and evolution. Monte Carlo simulations are also performed in a geometry representative of an image sensor, analyzing the distribution of non-ionizing deposited energy. The obtained distributions appear very similar for incident neutrons from 3 to 18 MeV and incident protons of 200 MeV, in agreement with similarities observed in experimentally measured dark current distributions in image sensors. The effect of geometric parameters on these distributions is finally explored.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : http://ieeexplore.ieee.org/document/7582531/ “© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
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Deposited On:07 Apr 2017 11:57

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