Goiffon, Vincent and Rolando, Sébastien and Corbière, Franck and Rizzolo, Serena and Chabane, Aziouz and Girard, Sylvain and Baer, Jérémy and Estribeau, Magali and Magnan, Pierre and Paillet, Philippe and Van Uffelen, Marco and Mont Casellas, Laura and Scott, Robin and Gaillardin, Marc and Marcandella, Claude and Marcelot, Olivier and Allanche, Timothé
Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments.
(2017)
IEEE Transactions on Nuclear Science, 64 (1). 45-53. ISSN 0018-9499
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(Document in English)
PDF (Auhtor's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 6MB |
Official URL: http://dx.doi.org/10.1109/TNS.2016.2636566
Abstract
The Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC) building blocks is explored in the Multi-MGy range using 60Co gamma-ray irradiations. The performances of the following CoC subcomponents are studied: radiation hardened (RH) pixel and photodiode designs, RH readout chain, Color Filter Arrays (CFA) and column RH Analog-to-Digital Converters (ADC). Several radiation hardness improvements are reported (on the readout chain and on dark current). CFAs and ADCs degradations appear to be very weak at the maximum TID of 6 MGy(SiO2), 600 Mrad. In the end, this study demonstrates the feasibility of a MGy rad-hard CMOS color digital camera-on-a-chip, illustrated by a color image captured after 6 MGy(SiO2) with no obvious degradation. An original dark current reduction mechanism in irradiated CMOS Image Sensors is also reported and discussed.
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