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Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors

Belloir, Jean-Marc and Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Gilard, Olivier and Raine, Mélanie and Paillet, Philippe Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors. (2016) In: IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), 11 July 2016 - 15 July 2016 (Portland, United States).

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The dark current spectroscopy is tested on twenty CMOS image sensors irradiated with protons, neutrons and various ions at different energies. The aim of this work is to differentiate the effect of coulomb and nuclear interactions on the radiation-induced dark current distribution and to identify the main radiation-induced defects responsible for the dark current increase for each type of interaction. For low-energy protons and low-energy light ions (which produce well-separated low energy coulomb interactions), we find that most of the pixels belong to a quantized dark current spectrum at low dark current. In these pixels, the dark current increase seems mainly dominated by specific point defects such as the divacancy and the vacancy-phosphorus complex. Thus, these simple defects seem to form when the displacement damage is rather low and sparse. On the contrary, for nuclear interactions (with neutrons or high-energy protons) producing high coulomb NIEL silicon PKAs or for low energy heavy ions (also having high coulomb NIEL), the DCS spectrum is not visible and all the pixels belong to an exponential hot pixel tail which extends to very high dark current. In these pixels, the dark current increase is mainly dominated by defects with close-to-midgap energy levels. These defects seem more complex than point defects because they can have many different generation rates (explaining the smooth hot pixel tail) and because they tend to form when the displacement damage is high and dense.

Item Type:Conference or Workshop Item (Speech)
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7372205&isnumber=7372095 “© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01503703
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited On:01 Feb 2017 13:38

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